The Export Control (Amendment) Regulations 2026

11 Amendments to Category 3 - Electronics

(1) The section headed Category 3 - Electronics is amended as follows. (2) In the section headed 3A Systems, Equipment and Components— (a) in Note 1 to section 3A, for “3A001 or 3A002” substitute “3A001, 3A002 or 3A501.15.”; (b) in entry 3A001.a.2., for “Static Random-Access Memories” substitute “Static Random Access Memories”; (c) for entry 3A001.a.5.a.1., substitute “Not used;”; (d) for entry 3A001.a.14.a.1., substitute “Not used;”; (e) in Note 1 to entry 3A001.b.1, for “the ITU” substitute “the International Telecommunication Union (ITU)”; (f) in entry 3A001.b.1.a.2., for “RF” substitute “Radio Frequency (RF)”; (g) in entry 3A001.b.10., for “single sideband” substitute “Single Sideband”; (h) in entry 3A001.e.1.b., for “350” substitute “500”; (i) in Note 1 to entry 3A001.g., for “MOS Controlled Thyristors (MCTs)” substitute “Metal Oxide Semiconductor (MOS) Controlled Thyristors (MCTs)”; (j) in entry 3A002.d.4., for “single sideband” substitute “Single Sideband”; (k) in entry 3A002.d.5., for “An ‘RF” substitute “A ‘Radio Frequency (RF)”; (l) for entry 3A002.h.1.a., substitute “Not used;”; (m) for entry 3A501.a.16., not including the N.B. and the Technical Notes, substitute— 16. Integrated circuits having one or more digital processing units, having any of the following: a. A ‘Total Processing Performance’ (‘TPP’) greater than or equal to 6 000; or b. A ‘TPP’ greater than or equal to 1 600 and less than 6 000 and a ‘performance density’ greater than or equal to 5,92. Note: 3A501.a.16.b. does not apply to items that are not designed for use in ‘data centres’. ; (n) in the N.B. to entry 3A501.a.16., for ““digital computers” and “electronic assemblies”” substitute “computers, “electronic assemblies” and components”; (o) in the Technical Note to entry 3A501.a.16.— (i) in paragraph 1., for “’Total processing performance’ (‘TPP’)” substitute “‘TPP’”; (ii) in paragraph 2., for “300 tera FLOPS (or 2 x 150 ‘MacTOPS’)” substitute “375 tera FLOPS”; (iii) after paragraph 3., insert— 4. | ‘Performance density’ is ‘TPP’ divided by ‘applicable die area’. ‘Applicable die area’ is measured in millimetres squared and includes all die area of logic dies manufactured with a process node that uses a non-planar transistor architecture. 5. | ‘Data centre’ is a structure, or group of structures, dedicated to the centralised accommodation, interconnection and operation of information technology and network telecommunications equipment providing data storage, processing or transmission services together with all the facilities and infrastructure for power distribution and environmental control. ; (p) after entry 3A501.b.13.c., insert— d. | Not Used; e. | Not Used; f. | Rotary input type absolute position inductive encoders, not specified in 3A001.f., having all of the following: 1. | Digital output; 2. | Outer diameter less than or equal to 40 mm; and 3. | Resolution equal to or greater than 16 bits; h. | Solid-state power semiconductor switches, diodes, or ‘modules’ rated for a maximum operating junction temperature less than or equal to 488 K (215ºC) and having all of the following: 1. | Repetitive peak off-state voltage (blocking voltage) exceeding 5 000 V; 2. | Continuous current greater than 1 A; and 3. | Semiconductor material with a bandgap of more than 2,0 eV. Note 1: | Repetitive peak off-state voltage in 3A501.h.1. includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. Note 2: | 3A501.h. includes: — Junction Field Effect Transistors (JFETs); — Vertical Junction Field Effect Transistors (VJFETs); — Metal Oxide Semiconductor Field Effect Transistors (MOSFETs); — Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOSFET); — Insulated Gate Bipolar Transistor (IGBT); — Thyristors and Silicon Controlled Rectifiers (SCRs); — Bipolar Junction Transistors (BJTs); — High Electron Mobility Transistors (HEMTs); — Gate Turn-Off Thyristors (GTOs); — Emitter Turn-Off Thyristors (ETOs); — PiN Diodes; — Schottky Diodes. Note 3: | 3A501.h. does not apply to switches, diodes, or ‘modules’, incorporated into equipment designed for civil automobile, civil railway, “civil aircraft”, civil power transmission and distribution, or civil ‘energy conversion’ applications. Note 4: | 3A501.h. includes silicon carbide, gallium nitride, and gallium oxide semiconductor switches, diodes or ‘modules’. Technical Notes: For the purposes of 3A501.h.2.: 1. | ‘Modules’ contain one or more solid-state power semiconductor switches or diodes. 2. | ‘Energy conversion’ is the process of converting one form of energy into another form of energy. N.B. See also 3A001.h . (3) In the section headed 3B Test, Inspection and Production Equipment— (a) in the Note to entry 3B001.f.2., for “flash imprint lithography” substitute “Flash Imprint Lithography”; (b) in entry 3B001.f.3.b.1., for “full width half maximum” substitute “Full-Width Half-Maximum”; (c) for entry 3B501.f.1.a., substitute “Not used;”; (d) after entry 3B501.n.1.c., including the Technical Note, insert— d. | Equipment designed or modified for deposition of molybdenum, ruthenium, or combinations thereof, having all of the following: 1. | Designed to operate with a metal precursor source designed or modified to operate at a temperature greater than 348 K (75ºC); and 2. | A process chamber (module) using a reducing agent containing hydrogen at a pressure equal to or greater than 4 kPa. Technical Note: For the purposes of 3B501.n.1.d.1., the metal precursor source need not be integrated with the equipment. The metal precursor could be delivered by an on-tool source or sub-fab metal precursor source. ; (e) after entry 3B501.n., insert— o. | Equipment designed for coating, depositing, baking or developing photoresist formulated for ‘Extreme Ultraviolet’ (‘EUV’) lithography; Technical Note: ‘Extreme Ultraviolet’ (‘EUV’) refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm. p. | Inspection equipment designed for the detection of defects in, or particles on, ‘Extreme Ultraviolet’ (‘EUV’) mask blanks or ‘EUV’ patterned masks; Technical Note: ‘Extreme Ultraviolet’ (‘EUV’) refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm. q. | Single wafer wet cleaning equipment with ‘surface modification’ drying; Technical Note: For the purpose of 3B501.q.,‘Surface modification’ refers to silylation of a surface. r. | Equipment designed for single wafer cleaning using supercritical CO2 or sublimation drying; s. | Equipment designed for ‘Extreme Ultraviolet’ (‘EUV’) ‘pattern shaping’; Technical Notes: 1. For the purposes of 3B501.s., ‘pattern shaping’ is a deposition or removal process used to improve overall patterning by reshaping or trimming patterns produced using “EUV” lithography. This process utilises non-vertical directed particles including ions, neutral particles, clusters, radicals, or light. 2. ‘Extreme Ultraviolet’ (‘EUV’) refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm. t. | Equipment designed for ion beam deposition or Physical Vapour Deposition (PVD) of a multi-layer reflector for ‘Extreme Ultraviolet’ (‘EUV’) masks; Technical Note: ‘Extreme Ultraviolet’ (‘EUV’) refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm. . (4) In the section headed 3C Materials, for entry 3C003, including the Note, substitute— [3C003] | Organo-inorganic compounds as follows: a. Organo-metallic compounds of aluminium, gallium or indium, having all the following: 1. A purity (metal basis) greater (better) than 99.999%; and 2. Aluminium, gallium or indium elements directly linked to carbon in the organic part of the molecule. b. Organo-arsenic, organo-antimony and organo-phosphorus compounds, having all the following: 1. A purity (inorganic element basis) greater (better) than 99.999%; and 2. Arsenic, antimony or phosphorus elements directly linked to carbon in the organic part of the molecule. . (5) In the section headed 3D Software— (a) in entry 3D002, for “or 3B501.n.” substitute “or 3B501.n. to 3B501.r.”. (b) in the Technical Notes to entry 3D006— (i) in paragraph 1, for “‘Electronic Computer-Aided Design’ (‘ECAD’)” substitute “‘ECAD’”; (ii) in paragraph 2, for “‘Register Transfer Level’ (‘RTL’)” substitute “‘RTL’”; (iii) in paragraph 3, for “‘Geometrical Database Standard II’ (‘GDSII’)” substitute “‘GDSII’”. (6) In the section headed 3E Technology— (a) in entry 3E002, for “arithmetic logic unit” substitute “Arithmetic Logic Unit (ALU)”; (b) in the Technical Note to entry 3E002.a., for “vector arithmetic logic unit” substitute “ALU”; (c) in entry 3E003.e., for “silicon-on-insulator” substitute “Silicon-on-Insulator”.